High-power LED lamp beads are mainly composed of high-power LED chips . How to manufacture high-quality LED high-power chips is essential. There are five common methods for manufacturing high-power LED chips:
1, increase the size method
By increasing the effective light-emitting area and size of the individual LEDs, the current flowing through the TCL layer is evenly distributed to achieve the desired luminous flux. However, simply increasing the light-emitting area does not solve the heat dissipation problem and the light-emitting problem, and does not achieve the expected luminous flux and practical application effects.
2, silicon floor flip method
Firstly, a large-sized LED chip suitable for eutectic soldering is prepared, and a silicon substrate of a corresponding size is prepared, and a gold conductive layer for eutectic soldering and a conductive layer (ultrasonic gold ball solder joint) are formed on the silicon substrate. Then, the eutectic soldering device is used to solder the large-sized LED chip to the silicon substrate. This kind of structure is more reasonable, considering both the light-emitting problem and the heat-dissipation problem, which is the current mainstream high-power LED production method.
In 2001, Lumileds developed the AlGaInN power flip-chip (FCLED) structure. The manufacturing process is: firstly deposit a NiAu layer with a thickness greater than 500A on the P-type GaN on top of the epitaxial wafer for ohmic contact and back. Reflection; then using a mask to selectively etch away the P-type layer and the multi-quantum well active layer, exposing the N-type layer; forming and etching to form an N-type ohmic contact layer, the chip size is 1 mm × 1 mm, P-type ohmic contact In a square shape, an N-type ohmic contact is inserted in a comb shape, which shortens the current spreading distance and minimizes the expansion resistance; then, the metal bumped AlGaInN chip is flip-chip bonded to the silicon with an antistatic protection diode (ESD) On the carrier.
3, ceramic floor flip method
Firstly, an LED chip with a large light-emitting area suitable for the eutectic soldering electrode structure and a corresponding ceramic substrate are prepared by using an LED chip general-purpose device, and a eutectic soldering conductive layer and a conductive layer are formed on the ceramic substrate, and then eutectic soldering is performed. The device solders large LED chips to the ceramic backplane. Such a structure not only considers the light-emitting problem but also the heat-dissipation problem, and the ceramic bottom plate is a high-heat-conducting ceramic plate, the heat dissipation effect is very ideal, and the price is relatively low, so it is a suitable floor material at present, and can be used for the future. Integrated circuit integrated package reserved space.
4, sapphire substrate transition method
After the PN junction is grown on the sapphire substrate according to the conventional InGaN chip fabrication method, the sapphire substrate is cut away, and then the conventional quaternary material is connected to fabricate a large-sized blue LED chip having the upper and lower electrode structures.
5, AlGaInN silicon carbide (SiC) back light method
CREE is the only manufacturer in the world to manufacture AlGaInN ultra-high brightness LEDs using SiC substrate. The structure of AlGaInN/SiCa chips produced in recent years has been continuously improved and the brightness has been continuously improved. Since the P-type and N-type electrodes are respectively located at the bottom and the top of the chip, single-wire bonding is adopted, which has good compatibility and convenient use, and thus becomes another mainstream product of AlGaInN LED development.
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