High-voltage MOS capacity to tight chip factory to push high integration LED driver

Semiconductor industry competes to develop high-integration LED lighting driver IC solutions. Under the tight production capacity of high-voltage MOS field-effect transistor (MOSFET), LED lighting system vendors are facing the dilemma of shipment deferral, so chip vendors are stepping up to announce the integration of high-voltage MOSFET LED lighting driver IC solutions for LED lighting. System customers are immune to the shortage of high voltage MOSFETs.

NXP's regional marketing director Wang Yongbin said that the resonant controllers for dimming and non-dimming LED driver ICs and LED lamps require high-voltage MOSFETs, so NXP will ensure that customers have access to high-quality LED driver IC solutions.

Wang Yongbin said that in 2013, the LED lighting market will be more vigorously developed. However, due to the serious shortage of high-voltage MOSFETs, the developers of LED lighting systems are caught in the predicament of having many orders but unable to ship, and it is difficult to make a big push in the market.

In order to avoid the market expansion due to insufficient supply of high-voltage MOSFETs, wafer manufacturers including NXP, STMicroelectronics and Baoer Inte (PI) have introduced LED lighting driver IC solutions integrating high-voltage MOSFETs. Ensuring that customers' LED lighting products are shipped flawlessly, while taking the opportunity to expand the market for LED lighting driver ICs.

Zhang Weichao, lighting product marketing manager of NXP Greater China, pointed out that LED lighting driver ICs for the integration of high-voltage MOSFETs must have high-voltage processes. However, due to the high threshold of high-voltage process technology, not all chip vendors have the ability to develop. It is expected that under this wave of shortages, there will be a tendency for LED lighting driver IC suppliers to grow and develop.

In order to aggressively insert the high-integration LED driver IC solution market, Wang Yongbin emphasized that NXP has converted the original SOI-HV high-voltage process to the ABCD3 process, which is more suitable for LED lighting applications. It is expected to start mass production in 2013, which is not only more suitable. Integrate high-voltage MOSFETs and reduce leakage currents, while eliminating the unnecessary functions of LED lighting applications, and energy-efficient LED driver IC products.

In addition to strengthening high-pressure process technology, since only a few high-voltage MOSFET manufacturers such as STMicroelectronics, Toshiba and Infineon are available at this stage, NXP is also required to ensure the smooth development of high-integration solutions. The preparation for preparation is complete.

Zhang Weichao revealed that NXP expects that the LED lighting market will expand rapidly in the second half of 2012. Therefore, it has already purchased products from high-voltage MOSFETs in advance, and now it can guarantee customers to achieve high-integration LED lighting driver IC solutions within six to eight weeks. In the future, it will be shortened to three to four weeks to pick up the goods. In addition, NXP has plans to invest in high-voltage MOSFET manufacturers to gain a more stable source of supply.

(This article is reproduced on the Internet. The texts and opinions expressed in this article have not been confirmed by this site, nor do they represent the position of Gaogong LED. Readers need to verify the relevant content by themselves.)
(This article is reproduced on the Internet. The texts and opinions expressed in this article have not been confirmed by this site, nor do they represent the position of Gaogong LED. Readers need to verify the relevant content by themselves.)
(This article is reproduced on the Internet. The texts and opinions expressed in this article have not been confirmed by this site, nor do they represent the position of Gaogong LED. Readers need to verify the relevant content by themselves.)

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