IR's new -30VP channel power MOSFET makes design simpler and more flexible

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International Rectifier (IR) has launched a new family of -30 V devices utilizing their latest SO-8 package P-channel MOSFETs. These components are specifically designed for battery charging and discharging switches, as well as system and load switches in DC applications. The new P-channel MOSFETs feature on-resistance (RDS(on)) ranging from 4.6 mΩ to 59 mΩ, offering flexibility for different power requirements. By eliminating the need for level shifting or charge pump circuitry, these devices provide an efficient and simplified solution for switching applications.

Pan Dawei, Vice President of Sales for IR Asia Pacific, stated, "Compared to the previous generation, this new SO-8 P-channel MOSFET series offers significant improvements in current handling capability. It gives customers a wide range of on-resistance options to meet their specific temperature and cost requirements. Additionally, the use of P-channel technology can help simplify circuit design, making it more efficient and cost-effective."

The P-channel MOSFET devices comply with the first-order moisture sensitivity (MSL1) standard and are made from lead-free materials, ensuring compliance with the RoHS directive. This makes them a reliable and environmentally friendly choice for modern electronics applications.

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