International Rectifier (IR) has launched a new family of -30 V P-channel MOSFETs utilizing its advanced SO-8 package technology, specifically designed for battery charging and discharging switches, as well as system and load switches in DC applications. These devices feature on-resistance (RDS(on)) ranging from 4.6 mΩ to 59 mΩ, offering flexibility to meet various power requirements. The P-channel design eliminates the need for level shifting or charge pump circuits, making it an efficient and cost-effective solution for power management systems.
Pan Dawei, Vice President of Sales for IR Asia Pacific, commented: "Compared to previous generations, this new SO-8 P-channel MOSFET series delivers significantly improved current handling capabilities. It provides customers with a wide range of RDS(on) options that can be tailored to their specific thermal and cost constraints. Additionally, the use of P-channel technology simplifies overall circuit design and enhances performance."
These P-channel MOSFETs are compliant with MSL1 (Moisture Sensitivity Level 1), ensuring reliability in high-volume manufacturing environments. They are also made with lead-free materials and fully comply with the RoHS (Restriction of Hazardous Substances) directive, making them environmentally friendly and suitable for a wide range of industrial and consumer electronics applications.
In addition to these technical advantages, the new series is ideal for compact designs where space efficiency and thermal performance are critical. Whether used in portable devices, power supplies, or automotive systems, these MOSFETs offer a reliable and efficient power switching solution that meets modern design challenges.
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