Compoundsemiconductor reports: Japanese LED developer Nichia has released a research report on energy-efficient deep ultraviolet (DUV) LEDs. Unlike other research groups, GaN compound semiconductor materials have been used as substrate materials to absorb part of the optical radiation. This time, Nichia is based on AlN substrates on sapphire to prepare DUV LED devices.
Today, research efforts focus on how to increase the equivalent power of DUV LED devices, which is about 2% higher than the current visible LED technology. To achieve this goal, Nichia thickens the AlN layer to increase crystal quality and increase efficiency.
The results show that an illumination system consisting of 26 DUV LEDs has an output power of 223 mW at a drive current of 1.85 A and an emission wavelength of 281 nm. This proves that it is feasible to grow a high-power DUV LED by growing an AlN layer on sapphire by MOCVD.
DUV LEDs are used in a variety of applications including disinfection, sensing and medical correction. DUV LEDs are more durable, more efficient and have a longer life than the technology used today in mercury lamps. Moreover, it is safer and reduces the risk of releasing toxic substances after the mercury lamp is broken. (LEDC MH translation)
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