According to Tom Dekker, Director of Wireless RF Sales and Marketing, Cree said: "Compared to GaAs transistors in the same frequency range, Cree's 0.25-micron GaN HEMT bare-die product family has more significant gain, efficiency and power density. Higher gains can Achieve higher efficiency integrated power solutions to enhance the performance of solid state power amplifiers in the C-band, X-band, and Ku-band."
Major market applications include marine radar, medical imaging, industrial and satellite communications. Compared to GaAs transistors, solid-state amplifiers offer higher reliability, lower cost, and greater efficiency, and can reduce the size of power amplifiers and power supplies. The high efficiency of GaN HEMT power amplifiers can effectively reduce the power consumption of the transmitter.
Ray Pengelly, Curie's RF Business Development Manager, said: "Crui's 0.25-micron GaN HEMT products have breakthrough performance, and significant improvements in efficiency and bandwidth enable transistor performance levels not achieved by GaAs transistors. For example, high switching modes The Power Amplifier (HPA) provides over 80% power added efficiency in the microwave frequency range. The GaN HEMT HPA has an instantaneous bandwidth of 6 to 18 GHz at powers over 10 W. The superior performance offered by 0.25 μm GaN products enables system engineers to Redesigning GaAs transistors and traveling wave tubes."
The new GaN HEMT bare chip products CGHV1J006D, CGHV1J025D, and CGHV1J070D are rated for 6W, 25W, and 70W, respectively, in the 40V drain voltage and Ku band operating frequency range.
The new SiC substrate GaN bare die product family uses Cree's patented technology, while the scalable large-signal device model is compatible with Agilent's Advanced Design System and AWR's Microwave Office analog platform, so RF design Engineers can accurately simulate advanced RF amplifier circuits, significantly reducing design cycles and achieving higher microwave frequencies. The 0.25 micron silicon carbide substrate GaN HEMT process has industry-leading reliability and is capable of operating at a drain voltage of 40V. When the channel temperature is as high as 225 degrees Celsius, the average trouble-free running time exceeds one million hours.
For more information on Cree's new 0.25 micron silicon carbide substrate GaN HEMT bare chip series, please visit
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